http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H04219317-A

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filingDate 1990-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_772cac30adbf54bf7569851fab7616c7
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publicationDate 1992-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H04219317-A
titleOfInvention Production of titanium oxide thin film
abstract PURPOSE: To form a titanium oxide thin film having uniform crystallinity on a substrate at a low temperature by reacting a titanium halide gas with oxygen gas in a plasma generated by high-frequency electric discharge. n CONSTITUTION: Gas of a titanium halide (e.g. titanium tetrachloride) is made to react with oxygen gas in a plasma generated by high-frequency electric discharge to form a titanium oxide thin film on a substrate made of single crystal of magnesium oxide. A titanium oxide thin film having uniform crystallinity can be formed on the substrate at a low temperature by this process. n COPYRIGHT: (C)1992,JPO&Japio
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0866635-A
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type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 29.