http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H042069-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9d5ebd9bdc11f7a4b267d7e865d5a84f |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01M14-00 |
filingDate | 1990-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_761305c7bd8cefd465bece18239849da |
publicationDate | 1992-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-H042069-A |
titleOfInvention | Photo storage battery |
abstract | PURPOSE: To hinder shortcircuiting due to Ag eduction and diffusion associated with charging/discharging of an Ag halide photo storage battery by forming a thin film of Pb halide between the Ag halide and a halogen catching electrode. n CONSTITUTION: An oxidated InSn transparent electrode 2, a transparent Ag layer 3, and an Ag halide layer 5 such as AgBr are formed one over another on a base board 1 made of clear glass, and further a Pb halide layer 5 such as PbBr 2 is formed. A halogen catching electrode 6 is formed over the surfaces of carbon fibers by means of attaching perylene with a solvent. Further thereto an electricity gathering electrode and a lead terminal are fitted followed by sealing to accomplish a storage battery. This prevents short-circuiting due to eduction and diffusion of Ag associated with charging/discharging, and an Ag halide photo storage battery with a long lifetime and reliability is obtained. n COPYRIGHT: (C)1992,JPO&Japio |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6575936-B1 |
priorityDate | 1990-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 16.