http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H04198483-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_086f7e73d7b41664750b79736f86b0d2 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-511 |
| filingDate | 1990-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d3462e1949c49bfcf09cd71af66a5279 |
| publicationDate | 1992-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H04198483-A |
| titleOfInvention | Thin film forming device |
| abstract | PURPOSE: To easily form a homogeneous thin film having good quality on a large substrate by previously converting a part of a gaseous raw materials to plasma at the time of bringing the gaseous raw material into reaction by a plasma CVD method and forming the compd. thin film on the substrate. n CONSTITUTION: A substrate 23 to be treated and a nozzle 30 for discharging the gaseous raw materials are disposed in a vacuum chamber 21. Gaseous TiCl 4 as the main gaseous raw material and gaseous N 2 as an auxiliary gaseous raw material are supplied into the outside pipe 32 of the nozzle 30. The gaseous H 2 as an auxiliary gaseous raw material for reduction is supplied into the inside pipe 34. A glow discharge is generated by impressing a DC or AC bias voltage to the substrate 23 by a power source device 25 to contact the main gaseous raw material and the auxiliary gaseous raw material into the plasma and to bring these gaseous raw materials into reaction, by which the thin film of TiN is formed on the substrate 23. The gaseous H 2 of the auxiliary gaseous raw material is previously converted to the plasma by a plasma forming means 25 and the plasma is supplied into the nozzle 30, by which the gaseous pressure in the nozzle 30 is set higher than the gaseous pressure in the chamber and the amt. of the byproduct impurities, such as TiCl 3 , generated at the time of the reduction by the H 2 of the TiCl 4 is suppressed. The thin film of the high-purity TiN is thus stably formed on the substrate. n COPYRIGHT: (C)1992,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014535001-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-1308483-C http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6960262-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008115412-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8092600-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007217749-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-03106730-A1 |
| priorityDate | 1990-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.