http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H04179236-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-732 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 |
| filingDate | 1990-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d94a653012bdfdce3d22bf2b2077384e |
| publicationDate | 1992-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H04179236-A |
| titleOfInvention | Manufacture of semiconductor device |
| abstract | PURPOSE: To control an etching operation by a method wherein an oxide film and a nitride film are formed sequentially on a diffusion layer, of a second conductivity type, which has been formed selectively on a semiconductor layer of a first conductivity type, a plurality of openings are formed, a second oxide film is then formed on the whole surface, and the second oxide film is removed selectively in at least one or more parts. n CONSTITUTION: An oxide film 2 is formed on an N-type silicon substrate 1; ions of a P-type impurity such as boron or the like are implanted by making use of a photoresist 3 as a mask; a P-type base 4 is formed. Then, the photoresist 3 is removed; after that, a nitride film 5 is formed. Then, the nitride film 5 is etched by using a CF 4 -based gas plasma by making use of a photoresist 6 as a mask; openings 7 for emitter and base contact use are formed on the P-type base layer 4. The oxide film 2 in the openings 7 is etched by making use of the photoresist 6 and the nitride film 5 as a mask. The photoresist 6 is removed; then, a second oxide film 8 is formed on the whole surface by a low-temperature CVD method. Then, the second oxide film 8 in an emitter opening 10 is etched by using a hydrofluoric acid-based solution by making use of a resist 9 as a mask. The photoresist 9 is removed; then, polysilicon 11 which contains phosphorus or arsenic as an N-type impurity is formed; after that, an oxide film 12 is formed. Then, a heat treatment is executed at a high temperature in an inert gas such as nitrogen or the like. Thereby, an N-type emitter 13 is formed. n COPYRIGHT: (C)1992,JPO&Japio |
| priorityDate | 1990-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.