http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H04169094-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_47cc435e1d443f13180f7766df104d9d |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B33-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B33-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B33-10 |
| filingDate | 1990-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa43537cc246ac48ab82e2e47f9ffc1e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d04a1f4ffdfa8bb9bd814be291fb0c21 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d339e51c3c8bc5c787b255481e7692f7 |
| publicationDate | 1992-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H04169094-A |
| titleOfInvention | Manufacture of thin film electroluminescence element |
| abstract | PURPOSE: To obtain a thin film EL device having good emission luminance by forming an emission layer through vacuum film formation in the atmosphere of sulfur oxide, with a compound comprising elements of group II as well as elements of group VI B, as a deposition source. n CONSTITUTION: An emission layer is formed by vacuum formation in the atmosphere of sulfur oxide, with a compound comprising elements of group II as well as elements of group VI B (besides oxygen) as a deposition source. For example, an ITO film is formed on a transparent substrate 1 by sputtering, which is etched so as to form a striped ITO transparent electrode as a transparent electrode 2, on which a Si 3 N 4 film is formed to a fixed thickness as a first insulating layer 3 by plasma CVD. A Mn activation zinc sulfide layer is formed to a fixed thickness as an emission layer 4 by electron beam deposition. As a target, a ZnS pellet is used, for which a predetermined wt.% of Mn is added to ZnS, and SO 2 is introduced into an electron beam deposition jar, after the pressure in it is reduced, and film formation is carried out. A thin film EL device of good emission luminance can thus be easily obtained. n COPYRIGHT: (C)1992,JPO&Japio |
| priorityDate | 1990-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.