http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H04152689-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 |
| filingDate | 1990-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_faefe03ce912463b476831936b5f1cdd |
| publicationDate | 1992-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H04152689-A |
| titleOfInvention | Manufacture of semiconductor laser |
| abstract | PURPOSE: To enable a process in which a II-V1 compound semiconductor above an optical waveguide is removed to be carried out in a self-aligned manner and to protect an optical waveguide against damage caused by overetching by a method wherein a process in which a photoresist on the II-VI compound semiconductor above the optical waveguide is removed and another process in which the II-VI compound semiconductor above the optical waveguide is removed are provided. n CONSTITUTION: An SiO 2 mask 6 is formed, and a substrate is etched to provide a rib. Then, a ZnSe thin film is epitaxially grown to form a single crystal ZnSe thin film 7 on a clad layer and the side face of the rib and a polycrystalline ZnSe 8 on the SiO 2 mask 6. Then, a photoresist 9 is applied onto all the surface of the substrate. The polycrystalline ZnSe 8 located above the rib is exposed through ashing by oxygen plasma. The polycrystalline ZnSe 8 is etched with a solution of nitric acid and hydrochloric acid. At this point, SiO 2 is hardly etched, so that the SiO 2 mask 6 is able to serve fully as an etching stop layer. n COPYRIGHT: (C)1992,JPO&Japio |
| priorityDate | 1990-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 16.