http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H04133418-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-28 |
| filingDate | 1990-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5276eebddb3ab34c443b37e3d57a8864 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a207c960086af2c955e99cfef4ce14fc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b9f149b90ac7b02a2153837baefeebd0 |
| publicationDate | 1992-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H04133418-A |
| titleOfInvention | Manufacture of p-type zinc chalcogenide crystal |
| abstract | PURPOSE: To obtain a P-type zinc chalcogenide crystal having high carrier density by a method wherein nitrogen-doped zinc chalcogenide crystal is epitaxially grown on a III-V compound substrate, and the above-mentioned crystal is heat-treated at the temperature of the above-mentioned epitaxial growth in a gaseous atmosphere, containing a VI-group element, at the dissociation pressure or higher. n CONSTITUTION: Nitrogen-doped zinc chalcogenide crystal is epitaxially grown on a III-V compound semiconductor substrate, then a heat treatment is conducted on the above-mentioned zinc chalcogenide crystal at the temperature or lower of the above-mentioned epitaxial growth in a gaseous atmosphere containing the VI-group element at the dissociation pressure or higher. For example, using dimethyl zinc, dimethyl selenium (DMSe) and ammonia as crystal growth material and also using an MOCVD method, nitrogen-doped ZnSe crystal is epitaxially grown on a GaAs substrate at the growth temperature of 500°C. Then, ZnSe crystals of high carrier density can be obtained by applying heat- treatment for one hour to ZnSe crystals having carrier concentration of 10 14 cm -3 in an atmosphere of hydrogen and DMSe whose partial pressure is 0.34Torr exceeding the dissociation pressure of ZnSe crystals at 500°C. n COPYRIGHT: (C)1992,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07235505-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-0245179-A1 |
| priorityDate | 1990-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.