http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H04115524-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 1990-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4311a914ba2ce32991ec7d6f2a41f4dc |
| publicationDate | 1992-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H04115524-A |
| titleOfInvention | Method for adding impurities to amorphous slc |
| abstract | PURPOSE: To enable a low-resistance p-tipe amorhous SiC to be formed by using Al as acceptor for forming a p-type layer to the amorphous SiC. n CONSTITUTION: Plasma is generated using a high-frequency power scpply 5 within a vacuum chamber 3, a raw material gas (for example, SiH 4 and C 2 H 4 ) which is supplied through a lower electrode with a raw material gas introducing hore 6 is degradated, and then an amorphous SiC is deposited on a substrate 1 which is mounted to an upper electrode with a substrate holder 4. At this time, Al can be added by suppyling an organic compound or chloride of Al (for example, (C n H 2n + 1 ) m Al Cl 3 - m : n and m indicate integers) simultaneously with the raw material gas, thus enabling a low-resistance p-type layer of amorphous SiC to be formed. n COPYRIGHT: (C)1992,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5363684-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5362684-A |
| priorityDate | 1990-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559517 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID312 |
Total number of triples: 14.