http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0397877-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11B5-127
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01F41-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11B5-31
filingDate 1989-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e12b292c733e5400af466e689b6b228
publicationDate 1991-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H0397877-A
titleOfInvention Method for etching fe-si-al alloy
abstract PURPOSE: To remarkably improve throughput by carrying out reactive etching in an atmosphere composed essentially of oxygen-type gas while heating a specimen to a specific temp. at the time of applying etching to an Fe-Si-Al alloy formed on the surface of a specimen. n CONSTITUTION: A heater 7 is fitted to a substrate 2 in an etching chamber 1 evacuated to about 1×10 -6 Torr, and the whole substrate 2 is held at least at 190°C. A specimen 3 in which a photoresist pattern (PR pattern) 8 is formed on an Fe-Si-Al alloy 5 is fitted to the above substrate 2. Subsequently, while allowing CCl 4 to flow on the surface of the specimen 3 through a gas introducing pipe 6 around the substrate 2, high-frequency waves are impressed between the substrate 2 and a positive plate 4 and plasma is produced to carry out reactive etching. By this method, the nearly vertical PR pattern 8 practically free from pattern conversion difference can be obtained. n COPYRIGHT: (C)1991,JPO&Japio
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102023549-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5607599-A
priorityDate 1989-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 19.