http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0373542-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812 |
| filingDate | 1989-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5fb0ae9f6374242d30f9fa8f2ada88c7 |
| publicationDate | 1991-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0373542-A |
| titleOfInvention | Manufacture of ga-as field effect transistor |
| abstract | PURPOSE: To manufacture a Ga-As field effect transistor free from fluctuation in film quality and having stable characteristics by forming a thin amorphous arsenic sulfide film between a gate electrode and a Ga-As substrate. n CONSTITUTION: A resist film 2 is formed on the surface of a Ga-As substrate 1 while Si ions are implanted to a specific portion to form a channel layer 3, and then amorphous arsenic sulfide 4 is very thinly deposited thereon by means of sputtering or the like. After gate metal is deposited on this sulfide film 4 by means of sputtering, it is processed to have a specific length and a gate electrode 5 is formed. Further by utilizing this gate electrode 5, an n'-type source layer 6 and an n'-type drain layer 7 are formed in a self-aligned manner by Si ion implantation so that they are slightly deeper than the channel layer 3. Then a silicon dioxide film is deposited as an insulation layer, Si ions are implanted through the insulation film 8 to form an n + -type source layer 9 and an n + -type drain layer 10 which are separated from the gate electrode 5 by approximately the thickness of the insulation film 8 thus realizing an LDD structure. Annealing is performed to activate the respective ion implanted layers to form a source electrode 11 and a drain electrode 12. n COPYRIGHT: (C)1991,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H03261147-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6207976-B1 |
| priorityDate | 1989-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.