http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0350731-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 1989-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e96387d04f1404f5ca1f76891469f145 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa6474fa5fc1a0cbe39fe3490b293ba1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a98920f3f08c736d4335e37ab108deee http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_027a14401cf015058178f70c2f2b4073 |
| publicationDate | 1991-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0350731-A |
| titleOfInvention | Thin film semiconductor device |
| abstract | PURPOSE: To relieve defects by constituting dual line wiring at the intersecting part of a gate bus and a data bus of a TFT gate array, and eliminating a part of the dual line wiring, when the short between the wirings generates. n CONSTITUTION: On a light transparent insulating substrate 10, Cr metal is selectively stuck and formed as a gate electrode and gate buses 1, 1'. By plasma discharge, silicon nitride 11 is deposited as a gate insulating film and an interlayer insulating film on the whole surface. By plasma discharge, an amorphous silicon layer is deposited as an amorphous semiconductor layer 2, and further N-type amorphous silicon 3 is deposited. After the amorphous silicon (the N-type layer also is contained) 2, 3 are etched in a desired pattern, a source electrode 4, a drain electrode 5 and data buses 5' are formed by using Cr, Al, etc., and the N-type amorphous silicon is etched by using the pattern as a mask. A transparent electrode is selectively stuck by using indium tin oxide, and a protecting film 7 is stuck on the almost whole surface by using silicon nitide and the like. Hence a semiconductor device can be relieved from the generation of defects caused by short circuiting by cutting a part of the dual line. n COPYRIGHT: (C)1991,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8405584-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8963152-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001267581-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012074625-A |
| priorityDate | 1989-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.