http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0344646-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 1989-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5333a0ccedf0eb7b6b74f0e3e673145 |
| publicationDate | 1991-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0344646-A |
| titleOfInvention | Formation of resist pattern |
| abstract | PURPOSE: To improve subsurface treating and line width controlling properties by treating the deposits on side walls generated at the time of dry development of a photoresist with plasma contg. fluorine or acidic soln. n CONSTITUTION: The prescribed parts of the photoresist film 3 are exposed via a mask pattern 17 by a UV beam 16 to form exposed parts 4a. Silicon is then selectively diffused into the exposed parts 4a in a gas contg. silicon in the molecule of hexamethyl disilazane, etc. The resist film is thereafter subjected to a dry development by O 2 plasma to remove the exposed parts. The deposits of 200 to 400Å are formed on the side walls of the resist film 6 in this state and, therefore, the resist film is immersed into an aq. soln. mixture composed of 90% ammonium fluoride and 40% acetic acid to remove the deposits in succession to the above-mentioned development. The controllability of the line width transferred on the subsurface side walls and the reproducibility of the subsurface working are improved in this way. n COPYRIGHT: (C)1991,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7312159-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7521373-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8951433-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8142673-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7399424-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11371899-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8632692-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11181220-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7432214-B2 |
| priorityDate | 1989-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.