http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0334338-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05624 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01056 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-02166 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-10253 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-4847 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01014 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01013 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-04042 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-05 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60 |
| filingDate | 1989-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b28af783127ad90e974e41097513bd1b |
| publicationDate | 1991-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0334338-A |
| titleOfInvention | Semiconductor device |
| abstract | PURPOSE: To eliminate the fact that a crack is generated in an insulating film or Al scraps are generated even if an alignment at the time of bonding is shifted from the center of the bonding ba a method wherein the side surfaces only of a bonding pad are covered with the insulating film and the insulating film is not made to exist on the bonding pad. n CONSTITUTION: An oxide film 2 is grown on a silicon substrate 1, subsequently an Al film is grown. Then, a bonding pad part is masked with a photoresist 4 and an unnecessary part of the Al film is removed by plasma etching using CCl 4 , for example, to form a bonding pad 3. Then, a plasma nitride film 5 is applied by a plasma CVD method as the resist 4 is left. Then, the whole substrate 1 is dipped into an organic solvent, the resist is made to elute and the film 5 on the resist 4 is removed by a lift-off method. A bonding wire 6 is bonded. n COPYRIGHT: (C)1991,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8169087-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2009087561-A1 |
| priorityDate | 1989-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.