http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H03276661-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 1990-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0096074924f289b276f66e340cf51333 |
| publicationDate | 1991-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H03276661-A |
| titleOfInvention | Formation of insulating region |
| abstract | PURPOSE: To obtain the optimum insulation resistance meeting the implantation requirements regardless of the carrier concentration profile of a GaAs wafer and an implantation insulating region suffering less crystal damage by a method wherein a process for insulating a hydrogen implanted region by implanting hydrogen ions and then heat treating said region is included in the tile formation process of the insulating region. n CONSTITUTION: Resist patterns 2 for selective ion implantation are formed on the surface of a GaAs wafer 1 and then hydrogen 3 as ion seed is implanted using an ion implanting machine,etc., so that the implanted hydrogen concentration may be unified to be 1.0×10 19 /cm 2 extending over the whole implanted depth region regardless of the carrier concentration profile of the GaAs wafer 1. Later, the resist patterns 2 are removed and then the whole body is heat treated from the time from several seconds to several minutes within the temperature range of 300°C-450°C e.g. for 10 minutes at 380°C. n COPYRIGHT: (C)1991,JPO&Japio |
| priorityDate | 1990-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 15.