http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H03263874-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0a6a69da5879eb83f56f6876dba3e3cf |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate | 1990-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa780b84da4e6f49fa8067b446607a2b |
| publicationDate | 1991-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H03263874-A |
| titleOfInvention | Semiconductor storage device and manufacture thereof |
| abstract | PURPOSE: To prevent a decrease in reliability due to diffusion of hydrogen atoms by forming a protective film for preventing invasion of the atoms due to diffusion only at the top of a MOS transistor, and covering the entire surface including the top of the protective film with a protective film easily diffusing the atoms. n CONSTITUTION: A gate insulating film 3b and a gate electrode 4b of a MOS transistor are formed, a silicon oxide film 5a, a silicon nitride film 6a are formed, a polysilicon film 7a is grown, a gate electrode 7b of an MNOS transistor, a silicon nitride film 6b to become a gate insulating film and a silicon oxide film 5b are formed. Then, source and drain regions 8, 9 of the MOS transistor and source and drain regions 10, 11 of the MNOS transistor are formed. Thereafter, a silicon nitride film 12 for preventing diffusion of hydrogen is selectively formed only at the top of the normal MOS transistor. Subsequently, a silicon oxide film 13 is formed as a film for easily diffusing hydrogen. n COPYRIGHT: (C)1991,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-100367517-C http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005045012-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001093979-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-03071606-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4545401-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6940152-B2 |
| priorityDate | 1990-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.