http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H03259260-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08K5-57 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L101-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08K5-3477 |
| filingDate | 1990-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7bc15c38f2c371ec2852ba66d27dbe87 |
| publicationDate | 1991-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H03259260-A |
| titleOfInvention | Resist composition and resist pattern forming method |
| abstract | PURPOSE: To substantially prevent the swelling of exposed regions and to allow fine patterning of a resist with a good resolving power by incorporating a resin or compd. having a silyl group in side chains and incorporating a photoacid generating agent therein. n CONSTITUTION: A resist compsn. contg. the resin or compd. having the silyl group in the side chain and the photoacid generating agent is applied on an underlying film 3 to form a resist film 4. Acid H + is generated in the resist region 4a by exposing of the resist film 4 and this acid H + is substd. with the silyl group in the side chain of the resin or compd. and the desorbed silyl group becomes a silane compd. The silane compd. is removed from the resist region 4a by the heat treatment of the resist film 4 so that there is substantially no Si in the resist region 4a. The selection ratio at the time of the development of the resist region 4a of the exposed region and the unexposed region is improved in this way. The swelling of the resist region 4a of the exposed region is substantially prevented and the resist film 4 is patterned finely by the good resolving power. n COPYRIGHT: (C)1991,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07319162-A |
| priorityDate | 1990-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.