http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H03253033-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate | 1990-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e98ca846ceb03ba9f0e13ee6e2bef876 |
| publicationDate | 1991-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H03253033-A |
| titleOfInvention | Manufacture of semiconductor device |
| abstract | PURPOSE: To contrive to improve the yield of a semiconductor device by a method wherein when a polysilicon film is buried in necessary opening parts, a mask is formed on the polysilicon film at a check part and before an electrode is formed, a decision on the good or bad of the characteristics of the device provided with the electrode is made possible. n CONSTITUTION: An etching is performed using an insulating film (a resin film) 7 as a mask using a reactive ion etching method. Then, a resin film 5 and a polysilicon film 4 are etched in order using a reactive ion etching method using CCl 4 gas and O 2 gas, for example, and the film 4 is left in opening parts only in an insulating film 3. Then, an insulating film 6 is etched with a dilute hydrofluoric acid solution and subsequently to the etching, the film 5 is removed in oxygen plasma. The film 4 is covered with a resin film 15 at parts where there is necessary to form emitter regions 9 and the film 4 in opening parts in a base is etched away using a hydrofluoric acid or a nitric acid aqueous solution. The film 15 is removed in oxygen plasma and thereafter, a heat treatment is performed at a high temperature, an impurity in the film 4 is diffused and the emitter regions 9 are formed. n COPYRIGHT: (C)1991,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6087675-A |
| priorityDate | 1990-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.