http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H03245587-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-15 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-14 |
| filingDate | 1990-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8caca68af804ffa0d3959b8dfa08aa84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e09bead5368ab9f85d8389b627147ef3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e4b76fe2534872f4efade2bebd3cd2f6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c27e65cbfd643038b9793af9e46f880 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f176344dde92af4663d9e3435db2863 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_89896c6f291f17cfaadcb565161b0324 |
| publicationDate | 1991-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H03245587-A |
| titleOfInvention | Manufacture of semiconductor device |
| abstract | PURPOSE:To protect a wiring against disconnection, to enable a very fine pattern to be advantageously formed, and to keep a semiconductor layer provided to the surface of a low substrate uniform in thickness by a method wherein the surface of a semiconductor element formed taking advantage of a single crystal layer is set level with that of another semiconductor element formed taking advantage of a substrate. CONSTITUTION:An AlXGa1-XAs 52 is formed on a semi-insulating GaAs substrate 51 through a MBE method, where X is made to increase gradually, a resist mask 53 is provided onto the layer 52, an etching process is made to take place using an hydrofluoric acid etchant through a stripe-like opening 53A to form a recess 54 provided with a slope 52A at the inner ends of the opening 53A, and then an AlGaAs mask 32 is provided onto a GaAs substrate 31. Most of the mask 32 is removed through an Ar ion etching to form a recess 31'. Then, a multilayered semiconductor layer 33 is deposited through a MBE method, a resist 34 is filled into a recess, an Ar ion sputtering etching method is made to take place, the resist 34 is etched, and the multilayered semiconductor layer 33 is left only inside the recess 31'. Semiconductor elements various in shape and very different in size can be formed on the same substrate depending on the shape of the resist 34, and a structure where a wiring is protected against disconnection at steps can be obtained. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007059615-A |
| priorityDate | 1984-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457280313 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID14917 |
Total number of triples: 23.