http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H03245531-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 1990-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_028da90b118a1ad718f4391810b748ee |
| publicationDate | 1991-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H03245531-A |
| titleOfInvention | Semiconductor device and manufacture thereof |
| abstract | PURPOSE: To enable a multilayer wiring structure in high density and high reliability to be formed by a method wherein, in order to form connecting holes one over the other hole, a layer insulating film is formed to be left in the first connecting hole. n CONSTITUTION: Al wiring 1, interlayer films 4 are formed on an oxide film 8 and simultaneously, a through hole 6 is formed in the film 4; later, another Al wiring 2 is formed on the whole substrate 8 to be electrically connected to the wiring 1 through the intermediary of the hole 6; and then the whole surface is coated with a plasma oxide film 9. Next, a layer insulating film 10 is formed on the film 9 to flatten the surface. Next, the films 10 and 9 are removed from the whole surface until either the surface of the wiring 2 is exposed or the film 9 is thinly left. Then, a plasma nitride film 11 is formed on the whole surface. Next, another film 9 is formed on the film 11. Next, the other through holes 7 are formed to be terminated as soon as the film 11 is exposed. Next, the film 11 is etched away to finish the through holes 7. Next, when the other Al wiring 3 is formed, a three layer Al wiring structure is erected. At this time, a proper aspect ratio structure can be exhibited by the residual film 10 in the hole 6. n COPYRIGHT: (C)1991,JPO&Japio |
| priorityDate | 1990-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069 |
Total number of triples: 13.