http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H03243772-A

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9c84a665c3d5fa92278c65f2091dc5be
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-52
filingDate 1990-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1b9bbb5278d695aa38a631031c84248d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_05cd1391fd92e2eaa49c927a7fba480e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_097be116e5dae61d44b421f88d2ef092
publicationDate 1991-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H03243772-A
titleOfInvention Formation of metal nitride coating film
abstract PURPOSE: To improve the film hardness and its adhesion to a substrate in the plasma CVD method using gaseous ammonia as an N source by obtaining the optimum supply power value form the relation between the emitted light intensity of NH radical and supply power to an electrode. n CONSTITUTION: A raw gas consisting of gaseous metal halide, gaseous ammonia and gaseous hydrogen is supplied into a vacuum chamber, a power is impressed on the electrode in the chamber to produce plasma in the chamber, and a metal nitride coating film is formed on the surface of a substrate. In this case, the relation between the emitted light intensity of NH radical and impressed power in the plasma space is previously measured, and the impressed power value P 0 at which the emitted light intensity is maximized is obtained. The impressed power value P to the electrode when the film is formed is controlled to 0.90P to 1.05P, and other conditions are set to the conditions when the P 0 is obtained. n COPYRIGHT: (C)1991,JPO&Japio
priorityDate 1990-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 18.