http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H03179453-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38520f366e74704305b34fb93a81121e |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26 |
| filingDate | 1989-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35e1df569c623313084e0f35a17e900e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1a0ea6d927e4c138a9b64bcc3d06cf07 |
| publicationDate | 1991-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H03179453-A |
| titleOfInvention | Pattern forming method |
| abstract | PURPOSE: To enable a fine pattern below one micron to be well formed by using a developing solution of a mixture of DIBK or MIBK, and DMF specified in concentration. n CONSTITUTION: A lower thermosetting photoresist layer is formed on a substrate and on this layer an upper Si-containing photoresist layer is laminated. The upper layer is exposed to high energy rays, such as ultraviolet rays, and developed by a developing solution of a mixture of DIBK or MIBK and the 5 - 30wt.% DMF, and the lower layer resist is etched by the reactive ion etching process using the obtained pattern as a pattern mask to fabricate a 2-layer resist pattern, thus permitting the obtained pattern forming method to eliminate problem on the residues of the space parts and the like of the line and base pattern below 1μm and to be superior in the microfabrication performance. n COPYRIGHT: (C)1991,JPO&Japio |
| priorityDate | 1989-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.