http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H03149829-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 |
| filingDate | 1989-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5257b64e386f9419e8de8a67c197b7ff |
| publicationDate | 1991-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H03149829-A |
| titleOfInvention | Semiconductor device |
| abstract | PURPOSE: To obtain an interconnection structure in which stress migration in the title semiconductor device of an aluminum multilayer interconnection structure can be alleviated by making slits directed toward the center of the device in the lower layer interconnections in the four corner parts of the device. n CONSTITUTION: In a semiconductor device having two or more aluminum layer interconnections, the lower layer interconnections 1 of the four corners of the device have slit structures centrally of the device. For example, slits 2 are formed at the interconnections 1 near the four corners 4 of the device, and the slits 2 are so directed toward the center of the device as to be resistant to stresses from the upper layer interconnection and from a mold package. The width of each slit 2 is, for example, 1.5-3 microns, and the length is preferably 1/3-1/2 of the interconnection 1. n COPYRIGHT: (C)1991,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5885857-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5763936-A |
| priorityDate | 1989-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.