http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H03149828-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 |
| filingDate | 1989-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5257b64e386f9419e8de8a67c197b7ff |
| publicationDate | 1991-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H03149828-A |
| titleOfInvention | Semiconductor device |
| abstract | PURPOSE: To obtain an interconnection structure in which stress migration in a semiconductor device of aluminum multilayer interconnection structure can be alleviated by forming a slit pattern perpendicular to the advancing direction of a lower layer aluminum interconnection to a structure in which wide interconnection layers are opposed at the upper and lower layers. n CONSTITUTION: In a semiconductor device having two or more aluminum multilayer interconnection structure, a slit pattern 2 is formed perpendicularly to the advancing direction of a lower layer aluminum interconnection 1 to a structure in which wide interconnection layers are opposed at the upper and lower layers 3, 1. It is effective that the width of the slit 2 is finer, but 1-2 micron width is suitable for processing. If the length of the slit excessively long, there might be a danger of line breakage due to the length. Accordingly, 1/4-1/3 of the width of the interconnection 1 is appropriate. Further, an interval between the slits is suitably the width of the interconnection 1-1/2 thereof. n COPYRIGHT: (C)1991,JPO&Japio |
| priorityDate | 1989-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.