http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H029153-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 1988-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a219c21d68579fd42879fa48136a1b2a |
| publicationDate | 1990-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H029153-A |
| titleOfInvention | Flattening treatment of semiconductor substrate |
| abstract | PURPOSE: To level stepped parts by changing an organic silicone resin layer into SiO 2 after exposing it to plasma oxygen and treating it through dry etching, thereby time-controlling the amount of etching correctly. n CONSTITUTION: A PSG layer 3 is deposited to the surface of a semiconductor substrate 1 and stepped parts are covered to coat them with an organic silicone resin 4. The substrate 1 is exposed to plasma oxygen. Such a treatment is the same as ashing treatment of a photoresist and its device which is the same device as that of ashing treatment is used as it is. Further, an etchback process is carried out for an SiO 2 layer in succession to the foregoing treatment. Such a dry etching treatment is performed according to etching of an ordinary SiO 2 layer 5 and then, for example, an etching gas of a fleon system is used. A slant face of the SiO 2 layer 5 is formed at the side face of a projected part by this treatment. The amount of etching is time-controlled correctly and thus flattening of the stepped parts is performed with certainty. n COPYRIGHT: (C)1990,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5023204-A |
| priorityDate | 1988-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419523291 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID977 |
Total number of triples: 16.