http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H028850-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30 |
| filingDate | 1988-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_382c38fb96658dd7c6e6c891b62ab174 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6ebe8b8d3fdcf42788496d0b15ea1ec3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_58557497d839fb299bf8b09025c6bb89 |
| publicationDate | 1990-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H028850-A |
| titleOfInvention | Electron ray resist having double structure |
| abstract | PURPOSE: To improve the accuracy of transferring an upper layer resist pattern to a lower layer by using a mixture composed of an electron ray decomposition type polymer consisting of a copolymer of 3-trimethylsilyl cyclopentene and sulfur dioxide and a phenol or cresol novolak resin into which a silicon-contg. substituent is incorporated as an upper layer resist. n CONSTITUTION: The mixture composed of the electron ray decomposition type polymer consisting of the 3-trimethylsilyl cyclopentene expressed by the formula I (where m:n=1:1) and the sulfur dioxide and the cresol novolak resin into which the silicone contg. substituent is incorporated is used as the upper resist having a two-layered structure. Namely, the C-S bond is decomposed by irradiation of electron rays if such polymer is used as a photosensitive agent. The polymer is, therefore, converted to a low polymer and has the easy tendency to dissolve in a developing soln. The Si atoms bond to the oxygen atoms to form SiO 2 with which the surface is coated at the time when the photosensitive agent and binder resin are decomposed by oxygen plasma and, therefore, the dry etching resistance is improved. The upper layer resist pattern is exactly transferred to the lower layer resist in this way and the accuracy of the integrated circuit is improved. n COPYRIGHT: (C)1990,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H03137649-A |
| priorityDate | 1988-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.