http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H025513-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_60e21de07fa18fc54e2150daffc14654 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate | 1988-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_166d1e11006e710b945dfb642ed7ad40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5cf55e3263f2e6d962e1fc5a3831ac4f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9daa4930d557a5931a817c98c505926d |
| publicationDate | 1990-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H025513-A |
| titleOfInvention | Manufacture of semiconductor thin film |
| abstract | PURPOSE: To selectively produce high quality crystals by a method wherein a material in vapor state is excited by microwave electron cyclotron resonance plasma to be crystal-deposited and the excited material is simultaneously carried to a substrate crystal by divergence magnetic field so that the excited material carried may be selectively crystal-deposited only on the exposed part on the surface of the substrate crystal. n CONSTITUTION: A divergence magnetic field is provided with the magnetic field distribution diminishing the intensity of magnetic field from a cavity resonance type plasma 8 producing chamber 7 in the substrate crystal direction. Masking material made of line and space type silicon oxide formed by photolithography are provided on a GaAs substrate 21 and then GaAs single crystals 23 are selectively formed only on the GaAs substrate 21. At this time, as for the microwave electron cyclotron resonance plasma source, arsine diluted with hydrogen (AsH 3 ) is led in so that gallium may be evaporated from a solid material evaporating cell 6 to be crystal-deposited. n COPYRIGHT: (C)1990,JPO&Japio |
| priorityDate | 1988-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.