http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0250462-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-82 |
| filingDate | 1988-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d943f55d3b26bf06448b126d7085003e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d11c56c7c7ab9d5c53c23892648260a4 |
| publicationDate | 1990-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0250462-A |
| titleOfInvention | Connecting method for interconnection of semiconductor integrated circuit device |
| abstract | PURPOSE: To reduce a connecting resistance, and to prevent the interconnections of a semiconductor integrated circuit from cracking by heating beforehand a semiconductor chip or wafer to form the interconnection, and forming the interconnection in this state. n CONSTITUTION: A semiconductor chip 13 in which a passivation film 23 is provided with a hole 24 at a prescribed position by a focused ion beam IB to expose Al interconnections 25 is heated, for example, to approx. 200°C. The exposed interconnections 13 in the contact hole 24 in this state are irradiated with the beam IB to be heated to decompose Mo(CO) 6 nearby and, the decomposed Mo is precipitated to fill the hole. Thereafter, the film 23 is scanned with the beam LB to cover the film 23 with the Mo, and Mo interconnections 26 are formed. Thus, a connecting resistance is reduced, and the interconnections are prevented from cracking. n COPYRIGHT: (C)1990,JPO&Japio |
| priorityDate | 1988-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419524206 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID98885 |
Total number of triples: 14.