http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0237783-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-64 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B5-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-40 |
| filingDate | 1988-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d6e3e042b668e08785d5145a32d2f0a3 |
| publicationDate | 1990-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0237783-A |
| titleOfInvention | Manufacture of end-face light-emitting type optical semiconductor device |
| abstract | PURPOSE: To accurately evaluate an optical output characteristic of a light-emitting element on a wafer by a method wherein an optical output face and an optical reflection face are formed on the wafer so as to be faced by utilizing an end face of an element region. n CONSTITUTION: A semiconductor substrate 10 and a P-side ohmic electrode 60 are brought into contact only in a contact region 50; this region is separated from the semiconductor substrate 10 in a peripheral part by using grooves 30 which are deeper than a p-n junction region 20. Since an element isolation region 90 is formed in the P-side ohmic electrode 60, light-emitting elements are separated electrically inside a wafer. Accordingly, when an N-side electrode is taken out from the whole surface of an N-side ohmic electrode 70 and an electric current flows to a gold-plated layer 80 on the P-side ohmic electrode 60 of the individual light-emitting elements, a beam is radiated through a silicon nitride film 40 from an optical output face 100; this beam is reflected by an optical reflection face 110 at an end part of an adjacent element facing the optical output face 100; the beam is taken out in a vertically upward direction; accordingly, a photodetector is arranged in parallel with a wafer face. Thereby, it is possible to accurately evaluate an optical output characteristic of the light-emitting elements on the wafer. n COPYRIGHT: (C)1990,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5632738-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6583510-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07131066-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102507931-A |
| priorityDate | 1988-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419522015 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID3084099 |
Total number of triples: 23.