http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0230694-A

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Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-40
filingDate 1989-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_853c8afe76c4c77f1147267bc9ec9681
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_63139595ca090f734bfd4bd3fb18b780
publicationDate 1990-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H0230694-A
titleOfInvention Vapor-phase epitaxial growth process
abstract PURPOSE: To perform a stable vapor-phase epitaxial growth of a good crystal by reacting HCl gas to iron obtained by the thermal decomposition of an Fe- containing organic compound and supplying the obtained iron chloride to effect the iron doping. n CONSTITUTION: H 2 gas containing ferrocene gas is passed through a ferrocene gas supplying tube 4. In the above process, the inside of the dopant-feeding tube 8 near the inlet of a heater 1 is heated to about ≥450°C with the heater 1 and the supplied ferrocene gas is thermally decomposed to deposit iron in the tube 8. The supply of ferrocene gas is stopped and HCl gas is introduced from the HCl-feeding tube 3 into the dopant-feeding tube 8. The supplied HCl gas reacts with the iron deposited in the tube 8 to form iron chloride, which is transferred to the surface of a wafer 7. InP is grown on the wafer in vapor- phase by the reaction of PCl 3 supplied from an introduction tube 5 with In in a source boat 6 and the InP is doped with iron by the supplied iron chloride gas. An iron-doped epitaxial layer of InP having high resistance can be grown by this process. n COPYRIGHT: (C)1990,JPO&Japio
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100531307-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019102541-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015191956-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-6477844-B1
priorityDate 1988-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419546718

Total number of triples: 23.