http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H02293656-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d6dacaa0ceae8e4330441f7bb1f70cb0 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-12 |
| filingDate | 1989-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b8d5e70d062884979990422a8542a339 |
| publicationDate | 1990-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H02293656-A |
| titleOfInvention | Gas sensor made of plasma-polymerized thin film |
| abstract | PURPOSE: To produce the gas sensor having a high gas sensitivity and gas selectivity and large area by forming a thin film formed by plasma polymn. of an org. tin complex as a sensitive material on a substrate. n CONSTITUTION: The acetyl acetone tin (IV) complex is deposited on the quartz substrate on which comb-shaped electrode consisting of Au are deposited by evaporation by using an internal electrode type plasma polymn. device having a small-sized electric furnace. The thin film formed in such a manner is elucidated to be a polymer contg. tin oxide by an IR spectral-and ESCA spectral analysis. This plasma-polymerized thin film exhibits semiconductor-like properties of low electric efficiency when the film is subjected to a heating treatment in air. The gas sensor which has the high gas sensitivity and gas selectivity and is formed to the large area by forming the sensor as a thin-film element is obtd. in this way. n COPYRIGHT: (C)1990,JPO&Japio |
| priorityDate | 1989-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.