http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H02292859-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0aaae00479c8b1b24221e4f3e983dbac |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0922 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K19-0185 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K19-0948 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K17-687 |
| filingDate | 1990-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35fec64122eb5778f1f8e59553d17b8e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_048c984dd1b1eed023e0a9245a51b404 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b2c44dbebc2a14b817579364434d990 |
| publicationDate | 1990-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H02292859-A |
| titleOfInvention | Nmos driver circuit for cmos circuit |
| abstract | PURPOSE: To provide a driver circuit, wherein a normal CMOS circuit is surely controlled with output voltage by using a normal enhancement mode NMOS transistor on pull-down side, for constituting with a series-connected n-channel enhancement mode MOS transistor pair. n CONSTITUTION: For circuit 20 in which first and second enhancement mode NMOS transistors 20 and 24 are formed on a common p-type silicon substrate 100, with each of transistors 22 and 24 comprising n-type source and drain areas 130, 132, 134, and 136, a source-drain channel of the two transistors 22 and 24 connected in series for driving each gate 124 in reverse phase, the surface of substrate part of the source-drain channel contains doped acceptor ions in concentration higher than that of the bulk part of the substrate 100 for setting of surface electric potential for the second transistor 24, and the surface of substrate part of the source-drain channel is not doped with acceptor ions of concentration higher than that of the bulk part of the substrate 100 for the first transistor 22. n COPYRIGHT: (C)1990,JPO |
| priorityDate | 1989-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541 |
Total number of triples: 21.