http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H02279596-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B19-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-10 |
| filingDate | 1989-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_155266042795075f9c21078260cffd05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd7bd2e7d371a090a3e1eef913278718 |
| publicationDate | 1990-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H02279596-A |
| titleOfInvention | Method for growing thin film of single crystal |
| abstract | PURPOSE: To grow a thin film-shaped β-barium borate single crystal having a large area in a high yield by growing β-barium borate on an α-barium borate single crystal substrate by epitaxial growth. n CONSTITUTION: A platinum crucible 6 contg. a BaB 2 O 4 -Na 2 O.BaB 2 O 4 mixture is set in a resistance heating furnace formed by winding a Kanthal wire 5 around an alumina refractory furnace 2 and the mixture is melted by heating. An α-barium borate single crystal substrate 3 fitted to a holder 4 mounted to a sapphire rod 1 is rotated and brought into contact with the surface of the molten starting material to grow β-barium borate on the substrate 3 by epitaxial growth. n COPYRIGHT: (C)1990,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5454345-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H03109297-A |
| priorityDate | 1989-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.