http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H02269353-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_14c9ad767fb6d5e9dabfb770d4e82252 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0755 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0758 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26 |
| filingDate | 1989-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_65a24e3df73e095b69aeaa9657825abb |
| publicationDate | 1990-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H02269353-A |
| titleOfInvention | Production of semiconductor by photolithography |
| abstract | PURPOSE: To make it possible to precisely duplicate the patterns of a projection mask by forming a bleachable layer having bleachable dyes in a polymer matrix contg. siloxane groups and org. functional groups on a deactivated resist layer. n CONSTITUTION: The resist layer 42 is formed on a substrate 41 and the bleachable layer 43 having the bleachable dyes in the polymer matrix contg. the siloxane groups. and the org. functional groups is formed thereon. The resist layer 42 has a sufficient thickness and the dyes absorbing light 45 to bleach the bleachable layer 43 are required to be incorporated therein. The reflection of the light 45 on the upper surface 45 of the substrate 41 is prevented and the disturbance of the sharpness of the patterns to be beached is prevented. The patterns are formed by exposing the bleachable layer 43 to the light 45 projected through the projection mask 48 from a light source. As a result, the undesirable reflection is averted and the contact mask of the sharp patterns having high oxygen permeability is formed. n COPYRIGHT: (C)1990,JPO |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012030579-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H03271745-A |
| priorityDate | 1988-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID458433298 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID977 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419523291 |
Total number of triples: 22.