http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H02248343-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4903b7b4b84e3b845aef791cad8f2e97 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C15-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C03C15-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B41-91 |
| filingDate | 1989-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a0d527c4ebde0bcf0d805d5bad910eb6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc2d1c011009506d02ae6f1f7c2ad8cc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3f3defa52ec21ecae4d72bbfebf972d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86df8815bc18c959b16bf5eb9b0b72b7 |
| publicationDate | 1990-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H02248343-A |
| titleOfInvention | Method for dry etching |
| abstract | PURPOSE: To obtain a finely grooved substrate on which whiskery Si is not grown even when an Si film is formed by CVD in the etching method using a masking material of heavy metals by specifying the substrate temp. at the time of removing the masking material with the gaseous plasma contg. Cl. n CONSTITUTION: A Cr film is formed on the surface of a glass substrate, for example, and a photoresist film is formed thereon, exposed and developed to obtain a masking material in which fine openings are provided at minute intervals. The substrate is dry-etched in a reaction chamber, into which a gaseous mixture of CCl 4 and O 2 is introduced to produce plasma, to form a Cr-film pattern, and then the resist film is removed. The substrate is then ion-etched in a reaction chamber to be charged with gaseous CF 4 and impressed with a high-frequency voltage to provide fine grooves. The substrate is dry-etched in a reaction chamber heated at 200-600°C and into which a gaseous mixture of CCl 4 and O 2 is introduced to produce plasma, and the masking material is removed. By this method, the desired clean substrate having a low content of residual Cr is obtained. n COPYRIGHT: (C)1990,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014218686-A |
| priorityDate | 1989-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419527288 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5943 |
Total number of triples: 18.