http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H02230759-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38520f366e74704305b34fb93a81121e |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 1989-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_46bc1246472e7687014086cd51dfab81 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d2c3815fd5d84c0292f737335f55c625 |
| publicationDate | 1990-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H02230759-A |
| titleOfInvention | Manufacture of semiconductor element |
| abstract | PURPOSE: To decrease Cl concentration in an interlayer insulating film, and prevent the fluctuation of threshold voltage of an element caused by heat treatment, by making a silicon oxide film containing arsenic oxide and phosphorus oxide an interlayer insulating film. n CONSTITUTION: After a silicon oxide film 12 is stuck and formed, a silicon oxide film 13 containing arsenic oxide and phosphorus oxide is deposited and formed on the whole surface by CVD method using AsCl 3 and PH 3 as source gas. In this case, the content of arsenic oxide and the content of phosphorus oxide in the silicon oxide film 13 are 2-20mol% and 2-9mol%, respectively. Since the silicon film containing arsenic oxide and phosphorus oxide is used as an interlayer insulating film in a semiconductor element formed in this manner, even when heat treatment is performed after plasma silicon nitride film formation, the threshold voltage of a parasitic MOS transistor does not fluctuate as compared with the case where a silicon oxide film containing only arsenic oxide is used as an interlayer insulating film. n COPYRIGHT: (C)1990,JPO&Japio |
| priorityDate | 1989-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.