http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H02213476-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6dd74b20fbf2e0ebf10c7bfad4f6c8c5 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45512 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4481 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B13-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G3-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L39-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-448 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-30 |
filingDate | 1989-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_655f7aa4fd99e4972c324b0e279409fc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d7e6829d3e6baa1dc1964ca5a553c28b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_281c20d88770f4d9e3732f7aadbb5e96 |
publicationDate | 1990-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-H02213476-A |
titleOfInvention | Vaporizer for cvd raw material for producing superconductor |
abstract | PURPOSE: To stably form a superconductor film having a uniform composition at the time of forming an oxide-based superconductor film on a substrate by CVD by vaporizing and mixing superconducting film forming raw gases by the vaporizer of specified structure. n CONSTITUTION: The organometallic complexes such as Y(DPM) 3 , Ba(DPM) 2 and Cu(DPM) 2 consisting of Y, Ba, Cu and dipivaloylmethane(DPM) are charged into vaporization cylinders 12. Ar as the carrier gas is supplied to the cylinders from inlets 16, and the vapors of the organometallic complexes heated and vaporized in the cylinders 12 are supplied to a mixing cylinder 11 from inlets 13. A transportation auxiliary gas consisting of a gaseous mixture of Ar and O 2 is supplied from a gas inlet 15 at one end of the mixing cylinder 11 to sufficiently mix raw gases, the obtained mixture is supplied to a CVD reactor from a discharge port 14 at the other end, and a Y-Ba-Cu-O-based superconducting film is formed in uniform thickness on the surface of the substrate in the reactor. n COPYRIGHT: (C)1990,JPO&Japio |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010022215-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8382897-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8187381-B2 |
priorityDate | 1989-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Predicate | Subject |
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isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID415747319 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID70700 |
Total number of triples: 26.