http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H02185972-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2dcebf5a7f7ddc3b081f70e8ce1c4097 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B28-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B31-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36 |
filingDate | 1989-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c24621e51c1082d18438844a40945c85 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_18af3ee17b04c6b855b54a7908fe2ec8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_589103876fcf0a9865622305eaa5f41f |
publicationDate | 1990-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-H02185972-A |
titleOfInvention | Method for synthesizing silicon carbide film |
abstract | PURPOSE: To obtain the silicon carbide film having a strong orientational property and good crystallinity in a relatively low vacuum in a short time by using a microwave plasma CVD method and specifying the amt. ratio of the three gases contg. C and Si to be diluted with gaseous H 2 as the raw gas. n CONSTITUTION: A microwave plasma CVD device is used, and three gases, namely an Si-contg. gas such as SiH 4 and SiCl 4 to be diluted with gaseous H 2 , CH 4 to be diluted with H 2 and a C-contg. gas such as CCl 4 , are used as the SiC film synthesizing raw gas. The flow rate ratio of the gases is adjusted to conform to inequalities I and II. A reaction chamber 1 contg. a substrate 2 is evacuated, and the raw gas is introduced from a supply part 4 to keep the pressure in the chamber 1 at several to several hundred Torr. Meanwhile, a microwave from a generator consisting of a microwave generator 5, etc., is introduced around the substrate 2 to produce plasma 9, hence the gases contg. C and Si are decomposed, and an SiC film is synthesized on the substrate 2. n COPYRIGHT: (C)1990,JPO&Japio |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-100428423-C |
priorityDate | 1989-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.