http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H02181496-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-46 |
| filingDate | 1989-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a9e88332edd52b65eaa00e5bf3597594 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f97f0a48cf13b625334a333e8a46824 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c734871f38b670d0769e951e2ed9ef5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed499cd2d832b7427756d5c8fe98524a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8b435e4a5f1b53f68d864f96a8a3c8b4 |
| publicationDate | 1990-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H02181496-A |
| titleOfInvention | Multilayered interconnection board |
| abstract | PURPOSE:To eliminate the peeling of the film of a multilayered inter-connection board and to improve the adhesive properties of the board by a method wherein a metallic element is implanted in the surface of a low-expansibility polyimide, which has a thermal expansion coefficient in a degree identical with that or a conductor wiring film, but is bad in adhesive properties, to form as an interlayer insulating film. CONSTITUTION:A low-expansibility polyimide having a thermal expansion coeffi cient identical with that of a conductor wiring film is applied on a silicon sub strate 5 by sping coating in a thickness or about 5mum and is performed a harden ing treatment under a high temperature. This substrate 5 is put in a load locking chamber 10 and after the interior of the chamber is decompressed, Ar gas is introduced to produce plasma by a microwave introducing tube. Then, a TiCl4 liquid is introduced through nozzles 14 by 4 to 6cc per minute and while being accelerated by field coils 16 and 17, decomposed Ti ions are implanted in the surface of a film 11 in a thickness or about 200Angstrom . Moreover, a Ti film is deposited on the implanted layer in a thickness of about 500Angstrom by an electron beam deposition method to form as an interlayer insulating film. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008545251-A |
| priorityDate | 1989-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419548916 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24193 |
Total number of triples: 21.