http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H02160667-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1374dd16777534b65ad4422333245af8 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/D01F9-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-571 |
| filingDate | 1989-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_514308b041c2d6970d7c23438442a148 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c0d39371655fdbfb2fd1853733a6841 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_19314f5cddf87636a2ec748ec8068494 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9b5fb15eda9aa4da63597553a1f6439 |
| publicationDate | 1990-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H02160667-A |
| titleOfInvention | Silicon carbide-based formed product and production thereof |
| abstract | PURPOSE: To obtain the title formed product excellent in flexibility and heat resistance by making at specified ratio a halogen adsorb or act on an organosilicon polymer form followed by making a basic substance act thereon and then by baking in an inert gas atmosphere, n CONSTITUTION: An organosilicon polymer such as polycarbosilastyrene copolymer is first made into a fibrous or filmy form. A halogen such as I 2 is then allowed to adsorb or act on the resulting formed product at pref. ≥50°C in such an amount as to be 0.01-150wt.% followed by making a basic substance such as NH 3 act thereon. The formed product thus treated is, if needed, put to preliminary baking followed by baking in an inert gas atmosphere. Said preliminary baking and baking are pref. made at 200-800°C and 800-1400°C, respectively. Thus, the objective SiC-based formed product excellent in flexibility and heat resistance and improved in mechanical properties with the atom ratio Cf(fixed carbon)/Si = 1.5-2.5 and the content of silicon oxide compound of ≤10wt.% in terms of oxygen can be obtained in high efficiency. n COPYRIGHT: (C)1990,JPO&Japio |
| priorityDate | 1988-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.