http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H02143559-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146 |
| filingDate | 1988-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_108bec55cec2527f592c9f25e643ab42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d0b6e00298c8630cf3132f81de184ead |
| publicationDate | 1990-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H02143559-A |
| titleOfInvention | Image sensor and manufacture thereof |
| abstract | PURPOSE: To enable the manufacture of an image sensor, which is composed of an amorphous silicon photodiode that can use a cheap glass substrate as its substrate and a polycrystalline silicon thin film transistor integrated together, in a simplified manufacturing process by a method wherein a polycrystalline silicon layer formed by annealing a required part of an amorphous silicon layer with laser rays is made to serve as the active layer of the thin film transistor. n CONSTITUTION: A transparent electrode 2 of TlO for instance is formed on a glass substrate 1, and an amorphous silicon film 3 to serve as a photoelectric conversion layer is formed on the whole face of the substrate 1. Next, a laser beam from an XeCl excimer as a light source is made to irradiate only a part of the film 3 which is to serve as a transistor to selectively form an amorphous silicon into a polycrystalline silicon for the formation of a polycrystalline silicon layer 4. Then, a gate insulating film 5 and a gate electrode 6 are successively formed on a part of the layer 4, and a film 7 is formed on a part excluding a photoelectric conversion section and a source and a drain region on the layer 4. Lastly, a phosphorus doped amorphous silicon film is formed, and a source and a drain electrode 9 are successively formed on a source region 8a and a drain region 8b respectively. n COPYRIGHT: (C)1990,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018530906-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012199563-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5612251-A |
| priorityDate | 1988-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.