http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H01309334-A

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filingDate 1988-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01a067fb628a51def2570d3bf1f23aca
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publicationDate 1989-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H01309334-A
titleOfInvention Manufacture of semiconductor device
abstract PURPOSE: To form a MIS device having an insulating film characterized by less defects, high capacitance and high dielectric constant by adsorbing halogen into the surface of Si after cleaning of an Si substrate, and thereby forming a protecting film for the surface of the Si. n CONSTITUTION: Halogen atoms (F, Cl, Br and I) are adsorbed into the exposed surface of a semiconductor substrate. Thereafter, a single layer insulating film or multilayered insulating films are deposited on the substrate. The insulating films incorporates silicon nitride or the oxides of metals such as tantalum, niobium, vanadium, titanium, zirconium, hafnium, aluminum and yttrium as a constituent element. Then, dust on the surface of Si is decreased. In this way, a MIS device having the insulating film characterized by less defects, high capacitance and high dielectric constant is formed. n COPYRIGHT: (C)1989,JPO&Japio
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11380600-B2
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type http://data.epo.org/linked-data/def/patent/Publication

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