http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H01309334-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 |
filingDate | 1988-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01a067fb628a51def2570d3bf1f23aca http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_00216ed0ddbce6daff8965c908ca1e94 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4dca83d19597d63a9852b47cb8f632bb |
publicationDate | 1989-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-H01309334-A |
titleOfInvention | Manufacture of semiconductor device |
abstract | PURPOSE: To form a MIS device having an insulating film characterized by less defects, high capacitance and high dielectric constant by adsorbing halogen into the surface of Si after cleaning of an Si substrate, and thereby forming a protecting film for the surface of the Si. n CONSTITUTION: Halogen atoms (F, Cl, Br and I) are adsorbed into the exposed surface of a semiconductor substrate. Thereafter, a single layer insulating film or multilayered insulating films are deposited on the substrate. The insulating films incorporates silicon nitride or the oxides of metals such as tantalum, niobium, vanadium, titanium, zirconium, hafnium, aluminum and yttrium as a constituent element. Then, dust on the surface of Si is decreased. In this way, a MIS device having the insulating film characterized by less defects, high capacitance and high dielectric constant is formed. n COPYRIGHT: (C)1989,JPO&Japio |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11380600-B2 |
priorityDate | 1988-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.