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filingDate 1988-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3dc135e70a21b39c72dec93f16fe087b
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publicationDate 1989-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H01291435-A
titleOfInvention Extrafine copper alloy wire for semiconductor device and semiconductor device
abstract PURPOSE: To improve a hardness of a bondable degree and corrosion resistance by setting the total content of S, Se and Te in high purity oxygen-free copper to 1.0ppm or less, and setting the total of one or more types of specific elements to 1.0 to 500 ppm. n CONSTITUTION: Electrolytic copper is employed as a raw material. After it is electrolytically refined, an element (e.g., La, etc.) to be easily formed as a compound with S, Se and Te is added thereto, it is zone refined, and high purity oxygen-free copper in which total content of S, Se and Te is 1.0ppm or less is prepared. This oxygen-free copper is dissolved in a vacuum melting furnace, one or two of Al, Cr, Fe, Mn, Ni, P, Sn and Zn are contained therein so that their total content becomes 1.0 to 500ppm, and is cast. Further, it is hot and cold drawn to form an extrafine copper alloy wire. Then, an Si chip is ball bonded with the extrafine wire. n COPYRIGHT: (C)1989,JPO&Japio
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8004094-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4705078-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8742258-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008085319-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011013527-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180041553-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011118009-A1
priorityDate 1988-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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