http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H01289182-A

Outgoing Links

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filingDate 1988-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_760eb986899cf29b1f9ea50e2d728707
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publicationDate 1989-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H01289182-A
titleOfInvention Semiconductor laser
abstract PURPOSE: To make possible the generation of a laser beam whose wavelengths ranges from blue to ultraviolet by a method wherein a semiconductor laser element and an optical second harmonic generating element are coupled with each other and are provided in the same package, the laser beam is coupled directly with a waveguide constituting the harmonic generating element and a second harmonic light is emitted through other end face of the waveguide. n CONSTITUTION: A crystal thin film consisting of 2-methyl-4-nitroaniline, 1,2- diphenylacetylene or the like, which have a remarkedly large nonlinear optical constant, is provided on a quartz glass substrate 1 slanting its film thickness to the direction vertical to the transmission direction of a laser beam and is used as an optical second harmonic generating element 2 of a waveguide structure. Moreover, a semiconductor laser crystal 3 is provided in the rear of this element 2 and the emitting point of the laser beam and the end face of a waveguide are made to coincide with each other to constitute a semiconductor laser in such a way that the maximum coupling efficiency is obtained. In such a way, while the laser is constituted small with a size, the effective refractive index of a fundamental wave and the effective refractive index of a harmonic wave are made to coincide with each other and the phase matching of the fundamental wave with the harmonic wave is made to execute efficiently the conversion of the wavelength of the laser. n COPYRIGHT: (C)1989,JPO&Japio
priorityDate 1988-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 20.