http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H01288853-A

Outgoing Links

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-36
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
filingDate 1988-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d300a29e1aa9a530715502318064140d
publicationDate 1989-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H01288853-A
titleOfInvention Dry etching method
abstract PURPOSE:To improve the etching resistance of a resist film by bringing the plasma of a gaseous fluorine system into contact with the resist film, thereby curing said film. CONSTITUTION:A Cr layer 2 of a desired thickness is formed on a glass substrate 1 and a resist for electron beam exposing is coated on the layer 2 and is then exposed and developed to form the resist film 3. This substrate is charged into a plasma treatment device and after the gaseous fluorine is introduced into the device, a desired power is supplied to the device to bring the plasma into contact with the film 3 by which the surface thereof is changed to the film 31 having the high etching resistance to the plasma of the gaseous mixture composed of CCl4 and O2. The gaseous mixture composed of the CCl4 and O2 is then introduced into the treatment device to etch the layer 2. The resist film is capable of maintaining the shape during dry etching and the accuracy of patterning is improved according to this method.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6544894-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6136723-A
priorityDate 1988-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 21.