http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H01272185-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aa6e4421d9e1159b6012d9bf702be572 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-062 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01R43-10 |
| filingDate | 1988-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e010283058373e864c77eed5645e45f0 |
| publicationDate | 1989-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H01272185-A |
| titleOfInvention | Manufacture of electric circuit board |
| abstract | PURPOSE:To prevent deterioration of a photoresist mask by forming an aqua- regia-resistant coat on a precious metal foil for producing a circuit pattern before etching the same. CONSTITUTION:A thin film of titanium nitride 3 is formed on the surface of a substrate by the DC magnetron sputtering so that a precious metal foil on the substrate surface is coated therewith. The thin film is an aqua-regia-resistant thin film formed for example of a metal such as titanium, niobium or tantalum, or titanium nitride, or an aqua-regia-resistant metal oxide such as silicon oxide or titanium oxide. The thin film is then covered with a photoresist mask 4, and exposure-and-development is performed to form openings 5 in the mask 4. The parts of the titanium nitride thin film 3 exposed in the openings 5 are etched with an etching solution principally composed of ammonium hydrogen fluoride so that further openings 6 are opened to expose the noble metal foil 2. The part of the noble metal foil exposed in the opening 6 are etched off with an etching solution of aqua regia type having increased concentration of hydrochloric acid. Thereby, an electric circuit is produced under the titanium nitride thin film 3. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7579251-B2 |
| priorityDate | 1988-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.