http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H01219021-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7e71e94dd7afa6aab21e52b6d5a18b9f |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G23-07 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 |
| filingDate | 1988-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_adc472d9a0526fc9c6407634ec268322 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a994ca5054a5279acb7614d5114ca7a |
| publicationDate | 1989-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H01219021-A |
| titleOfInvention | Method for forming titanium oxide thin film |
| abstract | PURPOSE: To easily obtain the subject thin film useful as high dielectric material in good repeatability and excellent controllability with a simplified device having excellent reliability, by introducing titanium halogenide gas to O 2 gas atmosphere and by generating plasma. n CONSTITUTION: The title thin film having desired properties is formed on the surface of substrate body consisting of, e.g., metal thin film for condenser, by introducing the desired amt. of the titanium halogenide gas capable of volatilizing at a low temp. such as TiCl 4 , as raw material, to the O 2 gas atmosphere capable of generating plasma and by generating plasma at 0-400°C under the condition of generating plasma by a plasma CVD method. n COPYRIGHT: (C)1989,JPO&Japio |
| priorityDate | 1988-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.