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filingDate 1988-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 1989-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H01206656-A
titleOfInvention Semiconductor device
abstract PURPOSE: To enhance incombustibility and preservation stability in a hightemperature atmosphere by a method wherein a specified hydrotalsite compound is added to an epoxy resin composition containing a brominated epoxy resin. n CONSTITUTION: A semiconductor element is sealed in an epoxy resin composition composed of an epoxy resin (component A), phenolic resin (component B), brominated epoxy resin (component C), antimony oxide powder (component D) containing 10ppb or less of U and Th, fused silica powder (component E) containing 10ppb or less of U and Th, and a hydrotalsite compound (component F) represented by a formula I. The component-C brominated epoxy resin should preferably be 420 or more in epoxy equivalence. Halogen ions generated in the thermal decomposition of the brominated epoxy resin employed as a flame retarder are effectively entrapped by the special hydrotalsite compound of the formula I, which ensures high reliability in a high-temperature atmosphere. n COPYRIGHT: (C)1989,JPO&Japio
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