http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H01198025-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30 |
| filingDate | 1988-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b1d7a229d681ed86381e63dbc81ce06 |
| publicationDate | 1989-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H01198025-A |
| titleOfInvention | Dry development method |
| abstract | PURPOSE: To eliminate an omission of development and to improve a film residual percentage, by a method wherein after a resist containing a polymer having a double or triple bond in a main chain is connected on a substrate and subjected to exposure, a gas containing oxygen is introduced into a plasma generating chamber, and the substrate is put in the downstream of generated plasma so that the resist may be developed. n CONSTITUTION: O 2 (or a mixed gas of O 2 /CF 4 ) is passed through an ozonizer 8 and introduced into a plasma generating chamber 1, while a microwave is also introduced into the chamber 1 from a waveguide 4 and through a microwave transmitting window 5, and a plasma is generated therein. The plasma is introduced into a treatment chamber 2 through an aluminum mesh 3, develops a substrate 9 to be treated which is set therein, and is exhausted from an exhaust port 7. In this case, a resist, for which the mixture of poly-2,3-dimethylbutadiene and cinnamoyl chloride is used, is subjected to exposure for about one minute by an Xe-Hg lamp and then developed in the downstream of the plasma. Under the conditions of development of an O 2 flow rate 2 LSM, an O 2 pressure 10Torr, a substrate temperature 100°C and a development time of about three minutes, a negative pattern whose film residual percentage is about 95% is obtained. n COPYRIGHT: (C)1989,JPO&Japio |
| priorityDate | 1988-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.