http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H01195442-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03C1-72 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 |
filingDate | 1988-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3bc1bc31ff17b703a207d229aacc7d57 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_747626f65c6f1099f5632f649152e00b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4abbb1c7edd8c85d7ff97dc97d955079 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9afce1bd8e96e6b943e4afd70e19baa8 |
publicationDate | 1989-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-H01195442-A |
titleOfInvention | Resist material for precise processing |
abstract | PURPOSE:To obtain the title resist material having high sensitivity, high resolution, and high resistance to oxygen dry etching by adopting a specified polymer contg. a pyrimidine dimer and a silylene bond in a molecular chain as a positive resist material. CONSTITUTION:A polymer expressed by formula I contg. a pyrimidine dimer and a silylene bond in the molecular chain is adopted as a positive resist material having high sensitivity for high energy beams. In formula I, each R<1> and R<2> is an H atom., methyl group, halogen atom., or cyano group; each R<3> and R<4> is an aliphatic hydrocarbon group or an aromatic hydrocarbon group; (l) is an integer 2-6; (m) is an integer 2-6; (n) is a positive integer. The mol.wt. of this positive resist material decreases due to cleavage at the pyrimidine dimer part and the silylene bond by the irradiation with high energy beams such as far ultraviolet rays having <=260nm wavelength or electron rays, etc., and functions as positive resist by being solubilized in a developing solvent. Thus, a resist material having high sensitivity, high resolution, and high resistance to oxygen dry etching is obtained. |
priorityDate | 1988-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.