http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H01188493-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-02
filingDate 1988-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_63139595ca090f734bfd4bd3fb18b780
publicationDate 1989-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H01188493-A
titleOfInvention Vapor phase epitaxy method
abstract PURPOSE: To enable doping of chromium in place of iron by supplying gaseous chromyl chloride to the part of a reaction tube where the temp. is below the decomposition temp. of the chromyl chloride and executing vapor phase epitaxy. n CONSTITUTION: The gaseous chromyl chloride is supplied to the part of the reaction tube where the temp. is below the decomposition temp. of the chromyl chloride in a vapor epitaxy method of doping the chromium by using the chromyl chloride. The chromyl chloride is liquid at room temp. and a carrier gas, for example, hydrogen, is usually bubbled in the chromyl chloride, then the chromyl chloride-contg. hydrogen prepd. in such a manner is supplied into the reaction tube. The gasified chromyl chloride is thermally decomposed at ≥650°C to generate a chromium oxide and hydrogen chloride by reacting with the gaseous hydrogen and, therefore, the supply position of the chromyl chloride- contg. hydrogen is required to be at ≤650°C. The chromyl chloride is consequently supplied preferably on the down stream of the reaction tube where the temp. is relatively low and more particularly preferably near the substrate in the case of an ordinary epitaxy reaction tube. n COPYRIGHT: (C)1989,JPO&Japio
priorityDate 1988-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 25.